WS.VII - WBG Semiconductors & Heterostructures

FRESCOES ROOM
WS.VII WIDE-BANDGAP SEMICONDUCTORS AND HETEROSTRUCTURES FOR POWER AND RF ELECTRONICS September 11
*Co-organized with:*

WORKSHOP COMMITTEE Filippo GIANNAZZO, IMM-CNR Patrick FIORENZA, IMM-CNR
Due to their outstanding physical properties, wide-bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are the materials of choice for high-power and high frequency electronics, with a broad range of applications in strategic fields, like electric vehicles, power conversion for renewable energies, aerospace, telecommunications. Owing to this strategic role, European Union recently funded, through the Chips-JU, the realization of a Pilot line dedicated to WBG semiconductor technology. This workshop will provide an opportunity for companies, R&I centres, and universities to learn about recent developments and open challenges in WBG and ultra-WBG (Ga₂O₃) materials and technology. Advanced characterization methods specifically optimized for these material systems and related devices will be presented. Finally, new opportunities offered by the integration of 2D materials (graphene, MoS₂) with WBG semiconductors will be discussed.

September 11
11:30 - 13:00 Wide-bandgap semiconductors and heterostructures for power and RF electronics 1/3 WS.VII.1 - TT.II.B
Chair: Filippo GIANNAZZO, IMM-CNR - Co-organized with IMM-CNR & iENTRANCE@ENL
This session will provide an overview on recent development of SiC, GaN and Ga₂O₃ materials and technology.
WS.VII.1.1 TT.II.B.1	Fabrizio ROCCAFORTE - CV CNR-IMM, Catania Advanced processing for energy efficient WBG semiconductors power devices: Recent trends and perspectives
WS.VII.1.2 TT.II.B.2	Yvon CORDIER - CV Université Côte d’Azur, CNRS-CRHEA, Valbonne, France Recent advances in Nitride heterostructures for RF and power devices
WS.VII.1.3 TT.II.B.3	Daniel ALQUIER - CV University of Tours, France Laser Annealing A New Strategy For SiC Power Device Contacts
WS.VII.1.4 TT.II.B.4	Roberto FORNARI - CV University of Parma Development and perspectives of Ga₂O₃ epitaxial layers for power electronics

14:00 - 15:30 Wide-bandgap semiconductors and heterostructures for power and RF electronics 2/3 WS.VII.2 - TT.III.B
Chair: Luca SERAVALLI, CNR-IMEM - Co-organized with IMM-CNR & iENTRANCE@ENL
This session will be focused on advanced physical and electrical characterization methods for (U)WBG materials and devices.
WS.VII.2.1 TT.III.B.1	Ildiko CORA - CV HUN-REN, Institute for Technical Physics and Materials Science, Hungary Advanced structural characterization of Gallium Oxide by electron microscopy
WS.VII.2.2 TT.III.B.2	Giuseppe GRECO - CV CNR-IMM, Catania Recent findings on Ohmic and Schottky contacts to β-Ga₂O₃
WS.VII.2.3 TT.III.B.3	Manuel FREGOLENT - CV University of Padova Trapping processes in vertical GaN Trench MOSFETs: from experimental analysis to simulations
WS.VII.2.4 TT.III.B.4	Béla PÉCZ - CV HUN-REN, Institute of Technical Physics and Materials Science, Hungary Advanced electron microscopy of WBG semiconductors and their heterostructures with 2D materials

16:00 - 17:30 Wide-bandgap semiconductors and heterostructures for power and RF electronics 3/3 WS.VII.3 - TT.IV.B
Chair: Patrick FIORENZA, IMM-CNR & iENTRANCE@ENL
This session will present recent developments in the integration of 2D materials (graphene, MoS₂) with Nitride semiconductors.
WS.VII.3.1 TT.IV.B.1	Luca SERAVALLI - CV CNR-IMEM, Parma Recent advances in the liquid precursors chemical vapor deposition (CVD) of MoS₂ on SiO₂ and on GaN
WS.VII.3.1 TT.IV.B.1	Federica BONDINO - CV CNR-IOM, Trieste Advanced soft-x absorption and photoemission spectroscopy of 2D materials and their heterostructures
WS.VII.3.1 TT.IV.B.1	Simonpietro AGNELLO - CV University of Palermo Thermally induced strain and doping of monolayer MoS₂ on metal, insulator and WBG substrates
WS.VII.3.1 TT.IV.B.1	Salvatore Ethan PANASCI - CV CNR-IMM, Catania Integration strategies and nanoscale electrical characterization of MoS₂ on WBG semiconductors