11 Sept. | ![]() |
11:30 - 13:00 |
FRESCOES ROOM | |||||||
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CHIPS & MICRO-NANO ELECTRONICS |
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TT.II - Technical Multi-Track with Parallel SYMPOSIA | |||||||
Wide-bandgap semiconductors and heterostructures for power and RF electronics 1/3 | |||||||
Co-organized with IMM-CNR & iENTRANCE@ENL Chair: Filippo GIANNAZZO, IMM-CNR |
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This session will provide an overview on recent development of SiC, GaN and Ga2O3 materials and technology. |
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The symposium is part of the WS.VII |
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TT.II.B.1 WS.VII.1.1 |
Fabrizio ROCCAFORTE - CV CNR-IMM Advanced processing for energy efficient WBG semiconductors power devices: Recent trends and perspectives |
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TT.II.B.2 WS.VII.1.2 |
Yvon CORDIER - CV Université Côte d’Azur, CNRS-CRHEA, Valbonne, France Recent advances in Nitride heterostructures for RF and power devices |
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TT.II.B.3 WS.VII.1.3 |
Daniel ALQUIER - CV University of Tours, France Laser Annealing A New Strategy For SiC Power Device Contacts |
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TT.II.B.4 WS.VII.1.4 |
Roberto FORNARI - CV University of Parma Development and perspectives of Ga2O3 epitaxial layers for power electronics |
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